The microscopic nature of localization in the quantum Hall effect

The quantum Hall effect arises from the interplay between localized and extended states that form when electrons, confined to two dimensions, are subject to a perpendicular magnetic field. The effect involves exact quantization of all the electronic transport properties due to particle localization. In the conventional theory of the quantum Hall effect, strong-field localization is associated with a single-particle drift motion of electrons along contours of constant disorder potential. Transport experiments that probe the extended states in the transition regions between quantum Hall phases have been used to test both the theory and its implications for quantum Hall phase transitions. Although several experiments on highly disordered samples have affirmed the validity of the single-particle picture, other experiments and some recent theories have found deviations from the predicted universal behaviour. Here we use a scanning single-electron transistor to probe the individual localized states, which we find to be strikingly different from the predictions of single-particle theory. The states are mainly determined by Coulomb interactions, and appear only when quantization of kinetic energy limits the screening ability of electrons. We conclude that the quantum Hall effect has a greater diversity of regimes and phase transitions than predicted by the single-particle framework. Our experiments suggest a unified picture of localization in which the single-particle model is valid only in the limit of strong disorder

Classification of Higher Dimensional Spacetimes

We algebraically classify some higher dimensional spacetimes, including a number of vacuum solutions of the Einstein field equations which can represent higher dimensional black holes. We discuss some consequences of this work.Comment: 16 pages, 1 Tabl

Tunable Surface Conductivity in Bi2Se3 Revealed in Diffusive Electron Transport

We demonstrate that the weak antilocalization effect can serve as a convenient method for detecting decoupled surface transport in topological insulator thin films. In the regime where a bulk Fermi surface coexists with the surface states, the low field magnetoconductivity is described well by the Hikami-Larkin-Nagaoka equation for single component transport of non-interacting electrons. When the electron density is lowered, the magnetotransport behavior deviates from the single component description and strong evidence is found for independent conducting channels at the bottom and top surfaces. The magnetic-field-dependent part of corrections to conductivity due to the Zeeman energy is shown to be negligible despite non-negligible electron-electron interactions.Comment: 5 pages, 3 figures. For comments and questions, please contact: [email protected]

Radiation induced zero-resistance states in GaAs/AlGaAs heterostructures: Voltage-current characteristics and intensity dependence at the resistance minima

High mobility two-dimensional electron systems exhibit vanishing resistance over broad magnetic field intervals upon excitation with microwaves, with a characteristic reduction of the resistance with increasing radiation intensity at the resistance minima. Here, we report experimental results examining the voltage - current characteristics, and the resistance at the minima vs. the microwave power. The findings indicate that a non-linear V-I curve in the absence of microwave excitation becomes linearized under irradiation, unlike expectations, and they suggest a similarity between the roles of the radiation intensity and the inverse temperature.Comment: 3 color figures; publishe

Composite fermions in periodic and random antidot lattices

The longitudinal and Hall magnetoresistance of random and periodic arrays of artificial scatterers, imposed on a high-mobility two-dimensional electron gas, were investigated in the vicinity of Landau level filling factor ν=1/2. In periodic arrays, commensurability effects between the period of the antidot array and the cyclotron radius of composite fermions are observed. In addition, the Hall resistance shows a deviation from the anticipated linear dependence, reminiscent of quenching around zero magnetic field. Both effects are absent for random antidot lattices. The relative amplitude of the geometric resonances for opposite signs of the effective magnetic field and its dependence on illumination illustrate enhanced soft wall effects for composite fermions

Electrical Transport in High Quality Graphene pnp Junctions

We fabricate and investigate high quality graphene devices with contactless, suspended top gates, and demonstrate formation of graphene pnp junctions with tunable polarity and doping levels. The device resistance displays distinct oscillations in the npn regime, arising from the Fabry-Perot interference of holes between the two pn interfaces. At high magnetic fields, we observe well-defined quantum Hall plateaus, which can be satisfactorily fit to theoretical calculations based on the aspect ratio of the device.Comment: to appear in a special focus issue in New Journal of Physic

Inference of the genetic network regulating lateral root initiation in Arabidopsis thaliana

Regulation of gene expression is crucial for organism growth, and it is one of the challenges in Systems Biology to reconstruct the underlying regulatory biological networks from transcriptomic data. The formation of lateral roots in Arabidopsis thaliana is stimulated by a cascade of regulators of which only the interactions of its initial elements have been identified. Using simulated gene expression data with known network topology, we compare the performance of inference algorithms, based on different approaches, for which ready-to-use software is available. We show that their performance improves with the network size and the inclusion of mutants. We then analyse two sets of genes, whose activity is likely to be relevant to lateral root initiation in Arabidopsis, by integrating sequence analysis with the intersection of the results of the best performing methods on time series and mutants to infer their regulatory network. The methods applied capture known interactions between genes that are candidate regulators at early stages of development. The network inferred from genes significantly expressed during lateral root formation exhibits distinct scale-free, small world and hierarchical properties and the nodes with a high out-degree may warrant further investigation

How branching can change the conductance of ballistic semiconductor devices

We demonstrate that branching of the electron flow in semiconductor nanostructures can strongly affect macroscopic transport quantities and can significantly change their dependence on external parameters compared to the ideal ballistic case even when the system size is much smaller than the mean free path. In a corner-shaped ballistic device based on a GaAs/AlGaAs two-dimensional electron gas we observe a splitting of the commensurability peaks in the magnetoresistance curve. We show that a model which includes a random disorder potential of the two-dimensional electron gas can account for the random splitting of the peaks that result from the collimation of the electron beam. The shape of the splitting depends on the particular realization of the disorder potential. At the same time magnetic focusing peaks are largely unaffected by the disorder potential.Comment: accepted for publication in Phys. Rev.

Electron scattering times in ZnO based polar heterostructures

The remarkable historic advances experienced in condensed matter physics have been enabled through the continued exploration and proliferation of increasingly richer and cleaner material systems. In this work, we report on the scattering times of charge carriers confined in state-of-the-art MgZnO/ZnO heterostructures displaying electron mobilities in excess of 10⁶ cm²/V s. Through an examination of low field quantum oscillations, we obtain the effective mass of charge carriers, along with the transport and quantum scattering times. These times compare favorably with high mobility AlGaAs/GaAs heterostructures, suggesting the quality of MgZnO/ZnO heterostructures now rivals that of traditional semiconductors